onsemi Single FETs, MOSFETs UF4C120070K3S

The UF4C120070K3S is a 1200 V, normally-off silicon carbide cascode JFET in a TO247-3 package measuring 15.90 x 20.96 x 5.03 mm, designed for high-efficiency switching applications such as EV charging and PV inverters. It features a drain-source on-resistance of 72 mΩ at 25°C, a maximum junction temperature of 175°C, and a gate threshold voltage of 4.8 V typical, enabling compatibility with 0 to 15 V gate drive standards. The device exhibits ultra-low gate charge of 37.8 nC and reverse recovery charge of 72 nC, with a body diode forward voltage of 1.43 V. It is RoHS compliant, Pb-free, halogen-free, and meets HBM Class 2 and CDM Class C3 ESD ratings. Thermal resistance junction-to-case is 0.53 to 0.69 °C/W.