onsemi Single FETs, MOSFETs UF3C120080K3S

The UF3C120080K3S is a silicon carbide cascode JFET designed as a normally-off power switch for high-efficiency switching applications such as EV charging, PV inverters, and motor drives. It is packaged in a TO247-3 case and rated for a drain-source voltage of 1200 V, with a continuous drain current of 33 A at 25 °C and 24 A at 100 °C. The device has a typical on-resistance of 80 mΩ at 25 °C and a maximum junction temperature of 175 °C. It exhibits low gate charge of 51 nC, negligible reverse recovery charge, and requires an external RC snubber for optimal switching performance. The device is Pb-free, halogen-free, and RoHS compliant.