NPN silicon power transistor designed for general purpose amplifier and switching applications, with a collector-emitter voltage rating of 40 V, continuous collector current of 6.0 A, and peak collector current of 10 A. It dissipates up to 65 W at a case temperature of 25°C and is housed in a TO-220 case, style 1. The device meets UL 94 V-0 flammability requirements and is RoHS compliant. Thermal resistance from junction to case is 1.67 °C/W. DC current gain ranges from 15 to 75 at 3.0 A collector current, with collector-emitter saturation voltage not exceeding 1.5 V at 6.0 A. Operating and storage junction temperature ranges from -65°C to +150°C.
Power Bipolar Transistor, 6A, 40V, NPN, TO-220AB, 3 Pin
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | TIP41G |
| Package Type | TO-220; TO-220AB |
