onsemi Single Bipolar Transistors TIP101G

Description
Bipolar (BJT) Transistor NPN - Darlington 80V 8A 2W Through Hole TO-220
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 80V 8A 2W Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - TIP101GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
TIP101GOS-ND
Single Bipolar Transistors TIP101GOS-ND
Bipolar (BJT) Transistor NPN - Darlington 80V 8A 2W Through Hole TO-220

Bipolar (BJT) Transistor NPN - Darlington 80V 8A 2W Through Hole TO-220

Buy Now Datasheet
Singapore, Singapore
8.0 A 100 V TO-220 Bipolar Transistor
276-TIP101G
8.0 A 100 V TO-220 Bipolar Transistor 276-TIP101G
8.0 A, 100 V NPN Darlington Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE Product overview: TIP101G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8.0 A, 100 V, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 8.0 A, 100 V, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-TIP101G can be used for catalog matching and distributor lookup.

8.0 A, 100 V NPN Darlington Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE Product overview: TIP101G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8.0 A, 100 V, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 8.0 A, 100 V, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-TIP101G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - TIP101G - 1267395-TIP101G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - TIP101G
1267395-TIP101G
TRANSISTORS - Transistors (BJT) - Single - TIP101G 1267395-TIP101G
Manufacturer: ON Semiconductor Win Source Part Number: 1267395-TIP101G Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 150°C (TJ) Package: TO-220-3 Power - Max: 2W Transistor Type: NPN - Darlington Family Name: TIP101 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-220AB Current - Collector (Ic) (Maximum): 8A Voltage - Collector Emitter Breakdown (Maximum): 80V Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 80mA, 8A Current - Collector Cutoff (Maximum): 50μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 1000 @ 3A, 4V Alternative Parts (Cross-Reference): TIP101; Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 1267395-TIP101G
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 150°C (TJ)
Package: TO-220-3
Power - Max: 2W
Transistor Type: NPN - Darlington
Family Name: TIP101
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-220AB
Current - Collector (Ic) (Maximum): 8A
Voltage - Collector Emitter Breakdown (Maximum): 80V
Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Maximum): 50μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 1000 @ 3A, 4V
Alternative Parts (Cross-Reference): TIP101;
Introduction Date: August 31, 1995
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
Darlington Transistors
TIP101G
Darlington Transistors TIP101G
Darlington Transistors 8A 80V Bipolar Power NPN

Darlington Transistors 8A 80V Bipolar Power NPN

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - TIP101G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
TIP101G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) TIP101G
TRANS NPN DARL 80V 8A TO220

TRANS NPN DARL 80V 8A TO220

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors RF Transistors Darlington Transistors Bipolar RF Transistors
Product Number TIP101GOS-ND 276-TIP101G 1267395-TIP101G TIP101G TIP101G
Product Name Single Bipolar Transistors 8.0 A 100 V TO-220 Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - TIP101G Darlington Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN
Package Type TO-220; TO-220-3 TO-220; SOT3
IC(max) 8000 milliamps 8000 milliamps
VCEO 80 volts 80 volts
VCBO 80 volts
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