onsemi Single FETs, MOSFETs SVD5806NT4G

Description
N-Channel 40V 33A (Tc) 40W (Tc) Surface Mount DPAK
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Description
N-Channel 40V 33A (Tc) 40W (Tc) Surface Mount DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 488-SVD5806NT4GTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-SVD5806NT4GTR-ND
Single FETs, MOSFETs 488-SVD5806NT4GTR-ND
N-Channel 40V 33A (Tc) 40W (Tc) Surface Mount DPAK

N-Channel 40V 33A (Tc) 40W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SVD5806NT4G - 1084111-SVD5806NT4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SVD5806NT4G
1084111-SVD5806NT4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SVD5806NT4G 1084111-SVD5806NT4G
Manufacturer: ON Semiconductor Win Source Part Number: 1084111-SVD5806NT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 860pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 19 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1084111-SVD5806NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 860pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 19 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SVD5806NT4G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SVD5806NT4G
Single FETs, MOSFETs SVD5806NT4G
MOSFET N-CH 40V 33A DPAK

MOSFET N-CH 40V 33A DPAK

Supplier's Site
Singapore
N-Channel 40V 33A 19 mOhm MOSFET Transistor
278-SVD5806NT4G
N-Channel 40V 33A 19 mOhm MOSFET Transistor 278-SVD5806NT4G
Power MOSFET 40V, 33A, 19 mOhm, Single N-Channel, DPAK. Power MOSFET, 2500-REEL Product overview: SVD5806NT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 33A, 19 mOhm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 33A, 19 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SVD5806NT4G can be used for catalog matching and distributor lookup.

Power MOSFET 40V, 33A, 19 mOhm, Single N-Channel, DPAK. Power MOSFET, 2500-REEL Product overview: SVD5806NT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 33A, 19 mOhm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 33A, 19 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SVD5806NT4G can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SVD5806NT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SVD5806NT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SVD5806NT4G
MOSFET N-CH 40V 33A DPAK

MOSFET N-CH 40V 33A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET NFET DPAK 40V 33A 19MOHM

MOSFET NFET DPAK 40V 33A 19MOHM

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Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 488-SVD5806NT4GTR-ND 1084111-SVD5806NT4G SVD5806NT4G 278-SVD5806NT4G SVD5806NT4G SVD5806NT4G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SVD5806NT4G Single FETs, MOSFETs N-Channel 40V 33A 19 mOhm MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 860 pF @ 25 V
Transistor Grade / Operating Range Automotive
V(BR)DSS 40 volts 40 volts
PD 40000 milliwatts 40000 milliwatts
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