Power MOSFET 40V, 33A, 19 mOhm, Single N-Channel, DPAK. Power MOSFET, 2500-REEL Product overview: SVD5806NT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 33A, 19 mOhm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 33A, 19 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SVD5806NT4G can be used for catalog matching and distributor lookup.
N-Channel 40V 33A (Tc) 40W (Tc) Surface Mount DPAK
Manufacturer: ON Semiconductor
Win Source Part Number: 1084111-SVD5806NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 860pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 19 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
MOSFET NFET DPAK 40V 33A 19MOHM
MOSFET N-CH 40V 33A DPAK
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SVD5806NT4G | SVD5806NT4G | 488-SVD5806NT4GTR-ND | 1084111-SVD5806NT4G | SVD5806NT4G | SVD5806NT4G |
| Product Name | N-Channel 40V 33A 19 mOhm MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SVD5806NT4G | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 40 volts | 40 volts | ||||
| IDSS | 33000 milliamps |
