onsemi Single FETs, MOSFETs STMFSC3D1N08M7

The STMFSC3D1N08M7 is an N-channel MOSFET with Shielded Gate and Dual Cool technology, designed for high-efficiency switching in applications such as synchronous rectifiers and server Vcore low-side circuits. It is packaged in an 8-lead DFN8 Dual Cool CASE 506EG with top-side cooling. The device has a maximum drain-to-source voltage of 80 V and a continuous drain current of 110 A at TC = 25°C. Its static drain-to-source on-resistance is maximum 3.1 mΩ at VGS = 10 V and ID = 24 A, and 4.0 mΩ at VGS = 8 V and ID = 21 A. Thermal resistance from junction to case is 2.3 °C/W (top) and 1.0 °C/W (bottom). The device is RoHS compliant and meets 100% UIL testing. The operating and storage junction temperature range is -55°C to +150°C.