onsemi Single FETs, MOSFETs STD110N02RT4G

Description
N-Channel 24V 32A (Ta) 1.5W (Ta), 110W (Tc) Surface Mount DPAK
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Description
N-Channel 24V 32A (Ta) 1.5W (Ta), 110W (Tc) Surface Mount DPAK
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - STD110N02RT4GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STD110N02RT4GOSTR-ND
Single FETs, MOSFETs STD110N02RT4GOSTR-ND
N-Channel 24V 32A (Ta) 1.5W (Ta), 110W (Tc) Surface Mount DPAK

N-Channel 24V 32A (Ta) 1.5W (Ta), 110W (Tc) Surface Mount DPAK

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FETs - Single - STD110N02RT4G - 1260757-STD110N02RT4G - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STD110N02RT4G
1260757-STD110N02RT4G
FETs - Single - STD110N02RT4G 1260757-STD110N02RT4G
Manufacturer: ON Semiconductor Win Source Part Number: 1260757-STD110N02RT4 G Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 1.5W, 110W Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 24V Id - Continuous Drain Current: 32A Rds On (Maximum) at Id, Vgs: 4.6mOhm at 20A, 10V Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 28nC at 4.5V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3440pF at 20V

Manufacturer: ON Semiconductor
Win Source Part Number: 1260757-STD110N02RT4G
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 1.5W, 110W
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 24V
Id - Continuous Drain Current: 32A
Rds On (Maximum) at Id, Vgs: 4.6mOhm at 20A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 28nC at 4.5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3440pF at 20V

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Sheung Wan, Hong Kong
MOSFET NFET 24V SPCL TR

MOSFET NFET 24V SPCL TR

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD110N02RT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD110N02RT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD110N02RT4G
MOSFET N-CH 24V 32A DPAK

MOSFET N-CH 24V 32A DPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STD110N02RT4GOSTR-ND 1260757-STD110N02RT4G STD110N02RT4G STD110N02RT4G
Product Name Single FETs, MOSFETs FETs - Single - STD110N02RT4G MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Grade / Operating Range Automotive
V(BR)DSS 24 volts
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