onsemi N-Channel SMD 600 V 2.8A MOSFET Transistor SSR4N60BTF

N-CHANNEL POWER MOSFET / N-Channel 600 V 2.8A (Tc) 2.5W (Ta), 49W (Tc) Surface Mount TO-252-3 (DPAK) Product overview: SSR4N60BTF from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 600 V, 2.8A, 2.5W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 600 V, 2.8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SSR4N60BTF can be used for catalog matching and distributor lookup.

Win Source Part Number: 1096325-SSR4N60BTF
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bulk
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-3 (DPAK)
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IRFR214BTFFP001; FQD3N60CTM;
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Fairchild Semiconductor
Other Names: 2156-SSR4N60BTF,FAIFSCSSR4N60BTF
Drive Voltage (Max Rds On, Min Rds On): 10V