The SSP4N90A is an N-channel power MOSFET designed for high-voltage switching applications with a drain-to-source voltage rating of 900 V and a continuous drain current of 4 A at 25°C. It is packaged in a TO-220-3 case with a maximum power dissipation of 120 W at 25°C and a thermal resistance junction-to-case of 1.04°C/W. The typical on-state resistance is 4.181 Ω at 10 V gate-source voltage and 2 A drain current. The device features avalanche ruggedness with a single-pulsed avalanche energy of 424 mJ and a gate-to-source voltage rating of ±30 V. Operating junction and storage temperature ranges from -55°C to +150°C. The input capacitance is 730 pF at 25 V drain-source voltage and 1 MHz frequency. The total gate charge is 35 nC at 10 V gate-source voltage. The device is not RoHS compliant.
Win Source Part Number: 1014772-SSP4N90A
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 120W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
REACH Status: Vendor Undefined
HTSUS: 8541.29.0095
Mfr: Fairchild Semiconductor
Other Names: FAIFSCSSP4N90A,2156-
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: RoHS non-compliant
| Win Source Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | 1014772-SSP4N90A |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single |
| Polarity | N-Channel |
