The SNXH150B95H3Q2F2PG-N is a high-density integrated power module combining IGBTs and anti-parallel diodes for use in solar inverters and uninterruptible power supplies. It is housed in a Q2BOOST package with press-fit pins and measures 107.2 mm by 47 mm. The module contains IGBTs rated at 950 V and 75 A continuous collector current, with a maximum junction temperature of 175 °C. The inverse diodes support forward currents up to 75 A and peak repetitive reverse voltages up to 2000 V. Silicon carbide Schottky diodes are included with a 1200 V rating and 30 A continuous current. The module features low switching losses, a low-inductive layout, and meets insulation standards of 3400 V RMS for 1 minute with a creepage distance of 12.7 mm. A thermistor with B-value of 3998°C is integrated for temperature monitoring.
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The SNXH150B95H3Q2F2PG-N is a high-density integrated power module combining IGBTs and anti-parallel diodes for use in solar inverters and uninterruptible power supplies. It is housed in a Q2BOOST package with press-fit pins and measures 107.2 mm by 47 mm. The module contains IGBTs rated at 950 V and 75 A continuous collector current, with a maximum junction temperature of 175 °C. The inverse diodes support forward currents up to 75 A and peak repetitive reverse voltages up to 2000 V. Silicon carbide Schottky diodes are included with a 1200 V rating and 30 A continuous current. The module features low switching losses, a low-inductive layout, and meets insulation standards of 3400 V RMS for 1 minute with a creepage distance of 12.7 mm. A thermistor with B-value of 3998°C is integrated for temperature monitoring.
