MOSFET P-CH 30V 4A SUPERSOT6
Trans MOSFET P-CH 30V 4A 6-Pin SuperSOT T/R Product overview: SI3457DV from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3457DV can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 028433-SI3457DV
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta)
Family Name: Si3457DV
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 8.1nC @ 5V
Max Input Capacitance: 470pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 50 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): RQ6E035ATTCR; SI3457DV-T2; Si3457DV-E3;
Introduction Date: April 18, 2001
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs
P-Channel 30V 4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
MOSFET P-CH 30V 4A SUPERSOT6
MOSFET, P-CH, -30V, -4A, SUPERSOT; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.044ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.8V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI3457DV | 278-SI3457DV | 028433-SI3457DV | SI3457DVTR-ND | SI3457DV | 07AH4770 | SI3457DV |
| Product Name | Single FETs, MOSFETs | 30V 4A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3457DV | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -30V, -4A, Supersot; Transistor Polarity Onsemi | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| IDSS | 4000 milliamps | -4000 milliamps | |||||
| PD | 1600 milliwatts | 800 milliwatts | 1600 milliwatts |
