onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3457DV SI3457DV

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 028433-SI3457DV Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Family Name: Si3457DV Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 8.1nC @ 5V Max Input Capacitance: 470pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 50 mOhm @ 4A, 10V Alternative Parts (Cross-Reference): RQ6E035ATTCR; SI3457DV-T2; Si3457DV-E3; Introduction Date: April 18, 2001 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 028433-SI3457DV Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Family Name: Si3457DV Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 8.1nC @ 5V Max Input Capacitance: 470pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 50 mOhm @ 4A, 10V Alternative Parts (Cross-Reference): RQ6E035ATTCR; SI3457DV-T2; Si3457DV-E3; Introduction Date: April 18, 2001 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3457DV - 028433-SI3457DV - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3457DV
028433-SI3457DV
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3457DV 028433-SI3457DV
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 028433-SI3457DV Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Family Name: Si3457DV Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 8.1nC @ 5V Max Input Capacitance: 470pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 50 mOhm @ 4A, 10V Alternative Parts (Cross-Reference): RQ6E035ATTCR; SI3457DV-T2; Si3457DV-E3; Introduction Date: April 18, 2001 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 028433-SI3457DV
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta)
Family Name: Si3457DV
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 8.1nC @ 5V
Max Input Capacitance: 470pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 50 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): RQ6E035ATTCR; SI3457DV-T2; Si3457DV-E3;
Introduction Date: April 18, 2001
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - SI3457DVTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3457DVTR-ND
Single FETs, MOSFETs SI3457DVTR-ND
P-Channel 30V 4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

P-Channel 30V 4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Buy Now Datasheet
Single FETs, MOSFETs - SI3457DV - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI3457DV
Single FETs, MOSFETs SI3457DV
MOSFET P-CH 30V 4A SUPERSOT6

MOSFET P-CH 30V 4A SUPERSOT6

Supplier's Site Datasheet
Mosfet, P-Ch, -30V, -4A, Supersot; Transistor Polarity Onsemi - 07AH4770 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -30V, -4A, Supersot; Transistor Polarity Onsemi
07AH4770
Mosfet, P-Ch, -30V, -4A, Supersot; Transistor Polarity Onsemi 07AH4770
MOSFET, P-CH, -30V, -4A, SUPERSOT; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.044ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.8V; Power RoHS Compliant: Yes

MOSFET, P-CH, -30V, -4A, SUPERSOT; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.044ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.8V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3457DV - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3457DV
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3457DV
MOSFET P-CH 30V 4A SUPERSOT6

MOSFET P-CH 30V 4A SUPERSOT6

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
SI3457DV
MOSFET SI3457DV
MOSFET SSOT6 SINGLE PCH

MOSFET SSOT6 SINGLE PCH

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028433-SI3457DV SI3457DVTR-ND SI3457DV 07AH4770 SI3457DV SI3457DV
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3457DV Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, P-Ch, -30V, -4A, Supersot; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 30 volts 30 volts
PD 1600 milliwatts 1600 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SuperSOT-6 SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6 TO-3 SOT23; SOT-23-6 Thin, TSOT-23-6
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