onsemi Single FETs, MOSFETs SI3442DV

Description
N-Channel 20V 4.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
Request a Quote Datasheet
Description
N-Channel 20V 4.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - SI3442DV-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3442DV-ND
Single FETs, MOSFETs SI3442DV-ND
N-Channel 20V 4.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

N-Channel 20V 4.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3442DV - 211627-SI3442DV - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3442DV
211627-SI3442DV
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3442DV 211627-SI3442DV
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 211627-SI3442DV Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SuperSOT-6 Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.1A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 14nC @ 4.5V Max Input Capacitance: 365pF @ 10V Maximum Gate-Source Voltage: 8V Maximum Rds On at Id,Vgs: 60 mOhm @ 4.1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 211627-SI3442DV
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.1A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 14nC @ 4.5V
Max Input Capacitance: 365pF @ 10V
Maximum Gate-Source Voltage: 8V
Maximum Rds On at Id,Vgs: 60 mOhm @ 4.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3442DV - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3442DV
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3442DV
MOSFET N-CH 20V 4.1A SUPERSOT6

MOSFET N-CH 20V 4.1A SUPERSOT6

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI3442DV-ND 211627-SI3442DV SI3442DV
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3442DV Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6 SOT3; SOT23; SuperSOT-6 SOT23; SOT-23-6 Thin, TSOT-23-6
V(BR)DSS 20 volts
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