MOSFET N-CH 20V 4.1A SSOT-6 Product overview: SI3442DV from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3442DV can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 211627-SI3442DV
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.1A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 14nC @ 4.5V
Max Input Capacitance: 365pF @ 10V
Maximum Gate-Source Voltage: 8V
Maximum Rds On at Id,Vgs: 60 mOhm @ 4.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
N-Channel 20V 4.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
MOSFET N-CH 20V 4.1A SUPERSOT6
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 278-SI3442DV | 211627-SI3442DV | SI3442DV-ND | SI3442DV |
| Product Name | 20V 4.1A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3442DV | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |
| PD | 1600 milliwatts | 1600 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |