onsemi Single IGBTs SGW23N60UFDTM

Description
IGBT 600V 23A 100W Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
IGBT 600V 23A 100W Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - SGW23N60UFDTM-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
SGW23N60UFDTM-ND
Single IGBTs SGW23N60UFDTM-ND
IGBT 600V 23A 100W Surface Mount D²PAK (TO-263)

IGBT 600V 23A 100W Surface Mount D²PAK (TO-263)

Buy Now Datasheet
IGBTs - Single - SGW23N60UFDTM - 064368-SGW23N60UFDTM - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - SGW23N60UFDTM
064368-SGW23N60UFDTM
IGBTs - Single - SGW23N60UFDTM 064368-SGW23N60UFDTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 064368-SGW23N60UFDTM Packaging: Reel - TR Mounting: SMD (SMT) Reverse Recovery Time (trr): 60ns Input Type: Standard Gate Charge: 49nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Maximum Current Collector: 23A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 100W Pulsed Collector Current: 92A Collector-emitter saturation voltage(Max): 2.6V @ 15V, 12A Total Switching Energy(Ets): 115μJ (on), 135μJ (off) Turn-on and Turn-off delay time: 17ns/60ns Testing Conditions: 300V, 12A, 23 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 064368-SGW23N60UFDTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 60ns
Input Type: Standard
Gate Charge: 49nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 23A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 100W
Pulsed Collector Current: 92A
Collector-emitter saturation voltage(Max): 2.6V @ 15V, 12A
Total Switching Energy(Ets): 115μJ (on), 135μJ (off)
Turn-on and Turn-off delay time: 17ns/60ns
Testing Conditions: 300V, 12A, 23 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - SGW23N60UFDTM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
SGW23N60UFDTM
Discrete Semiconductor Products - Transistors - IGBTs SGW23N60UFDTM
IGBT 600V 23A 100W D2PAK

IGBT 600V 23A 100W D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number SGW23N60UFDTM-ND 064368-SGW23N60UFDTM SGW23N60UFDTM
Product Name Single IGBTs IGBTs - Single - SGW23N60UFDTM Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data