onsemi Single IGBTs SGW10N60RUFDTM

Description
IGBT 600V 16A 75W Surface Mount D²PAK (TO-263)
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Description
IGBT 600V 16A 75W Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

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Single IGBTs - SGW10N60RUFDTM-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
SGW10N60RUFDTM-ND
Single IGBTs SGW10N60RUFDTM-ND
IGBT 600V 16A 75W Surface Mount D²PAK (TO-263)

IGBT 600V 16A 75W Surface Mount D²PAK (TO-263)

Buy Now Datasheet
IGBTs - Single - SGW10N60RUFDTM - 064367-SGW10N60RUFDTM - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - SGW10N60RUFDTM
064367-SGW10N60RUFDTM
IGBTs - Single - SGW10N60RUFDTM 064367-SGW10N60RUFDTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 064367-SGW10N60RUFDT M Packaging: Reel - TR Mounting: SMD (SMT) Reverse Recovery Time (trr): 60ns Input Type: Standard Gate Charge: 30nC Family Name: SGW10N60RUFD Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Maximum Current Collector: 16A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 75W Pulsed Collector Current: 30A Collector-emitter saturation voltage(Max): 2.8V @ 15V, 10A Total Switching Energy(Ets): 141μJ (on), 215μJ (off) Turn-on and Turn-off delay time: 15ns/36ns Testing Conditions: 300V, 10A, 20 Ohm, 15V Alternative Parts (Cross-Reference): IRG4BC20K-SPbF; IRG4BC20K-STRLPBF; IRG4BC20FD-STR; IRG4BC20FD-STRL; Introduction Date: October 16, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 064367-SGW10N60RUFDTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 60ns
Input Type: Standard
Gate Charge: 30nC
Family Name: SGW10N60RUFD
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Maximum Current Collector: 16A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 75W
Pulsed Collector Current: 30A
Collector-emitter saturation voltage(Max): 2.8V @ 15V, 10A
Total Switching Energy(Ets): 141μJ (on), 215μJ (off)
Turn-on and Turn-off delay time: 15ns/36ns
Testing Conditions: 300V, 10A, 20 Ohm, 15V
Alternative Parts (Cross-Reference): IRG4BC20K-SPbF; IRG4BC20K-STRLPBF; IRG4BC20FD-STR; IRG4BC20FD-STRL;
Introduction Date: October 16, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - SGW10N60RUFDTM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
SGW10N60RUFDTM
Discrete Semiconductor Products - Transistors - IGBTs SGW10N60RUFDTM
IGBT 600V 16A 75W D2PAK

IGBT 600V 16A 75W D2PAK

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number SGW10N60RUFDTM-ND 064367-SGW10N60RUFDTM SGW10N60RUFDTM
Product Name Single IGBTs IGBTs - Single - SGW10N60RUFDTM Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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