IGBT 600V 8A 35W Through Hole TO-220F-3
Win Source Part Number: 1277404-SGS5N60RUFDT
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 1,000
Power - Max: 35 W
Reverse Recovery Time (trr): 55 ns
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 8 A
Current - Collector Pulsed (Icm): 15 A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 5A
Switching Energy: 88µJ (on), 107µJ (off)
Input Type: Standard
Gate Charge: 16 nC
Td (on/off) @ 25°C: 13ns/34ns
Test Condition: 300V, 5A, 40Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F-3
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 70 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Base Product Number: SGS5N
Product Status: Obsolete
IGBT 600V 8A 35W TO220F
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SGS5N60RUFDTU-ND | 1277404-SGS5N60RUFDTU | SGS5N60RUFDTU |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
