onsemi 600V 10A IGBT Transistor SGS10N60RUFDTU

IGBT, 600V, 10A, Short Circuit Rated, 1000-TUBE Product overview: SGS10N60RUFDTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 10A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 10A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-SGS10N60RUFDTU can be used for catalog matching and distributor lookup.

IGBT 600V 16A TO220F

IGBT 600V 16A 55W Through Hole TO-220F-3

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 064363-SGS10N60RUFDTU
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 60ns
Input Type: Standard
Gate Charge: 30nC
Family Name: SGS10N60RUFD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Maximum Current Collector: 16A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 55W
Pulsed Collector Current: 30A
Collector-emitter saturation voltage(Max): 2.8V @ 15V, 10A
Total Switching Energy(Ets): 141μJ (on), 215μJ (off)
Turn-on and Turn-off delay time: 15ns/36ns
Testing Conditions: 300V, 10A, 20 Ohm, 15V
Alternative Parts (Cross-Reference): STGF19NC60KD; STGF19NC60HD; STGF7NB60SL; STGF10M65DF2;
Introduction Date: April 20, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs