onsemi IGBTs - Single - SGS10N60RUFDTU SGS10N60RUFDTU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 064363-SGS10N60RUFDT U Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 60ns Input Type: Standard Gate Charge: 30nC Family Name: SGS10N60RUFD Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Maximum Current Collector: 16A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 55W Pulsed Collector Current: 30A Collector-emitter saturation voltage(Max): 2.8V @ 15V, 10A Total Switching Energy(Ets): 141μJ (on), 215μJ (off) Turn-on and Turn-off delay time: 15ns/36ns Testing Conditions: 300V, 10A, 20 Ohm, 15V Alternative Parts (Cross-Reference): STGF19NC60KD; STGF19NC60HD; STGF7NB60SL; STGF10M65DF2; Introduction Date: April 20, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
  • IGBTs - Single - SGS10N60RUFDTU - 064363-SGS10N60RUFDTU - Win Source Electronics
    Win Source Electronics
  • Single IGBTs - SGS10N60RUFDTU - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • IGBT - 109097640 - Radwell International
    Radwell International
  • Single IGBTs - SGS10N60RUFDTU-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - IGBTs - SGS10N60RUFDTU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 064363-SGS10N60RUFDT U Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 60ns Input Type: Standard Gate Charge: 30nC Family Name: SGS10N60RUFD Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Maximum Current Collector: 16A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 55W Pulsed Collector Current: 30A Collector-emitter saturation voltage(Max): 2.8V @ 15V, 10A Total Switching Energy(Ets): 141μJ (on), 215μJ (off) Turn-on and Turn-off delay time: 15ns/36ns Testing Conditions: 300V, 10A, 20 Ohm, 15V Alternative Parts (Cross-Reference): STGF19NC60KD; STGF19NC60HD; STGF7NB60SL; STGF10M65DF2; Introduction Date: April 20, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - SGS10N60RUFDTU - 064363-SGS10N60RUFDTU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - SGS10N60RUFDTU
064363-SGS10N60RUFDTU
IGBTs - Single - SGS10N60RUFDTU 064363-SGS10N60RUFDTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 064363-SGS10N60RUFDT U Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 60ns Input Type: Standard Gate Charge: 30nC Family Name: SGS10N60RUFD Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Maximum Current Collector: 16A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 55W Pulsed Collector Current: 30A Collector-emitter saturation voltage(Max): 2.8V @ 15V, 10A Total Switching Energy(Ets): 141μJ (on), 215μJ (off) Turn-on and Turn-off delay time: 15ns/36ns Testing Conditions: 300V, 10A, 20 Ohm, 15V Alternative Parts (Cross-Reference): STGF19NC60KD; STGF19NC60HD; STGF7NB60SL; STGF10M65DF2; Introduction Date: April 20, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 064363-SGS10N60RUFDTU
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 60ns
Input Type: Standard
Gate Charge: 30nC
Family Name: SGS10N60RUFD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Maximum Current Collector: 16A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 55W
Pulsed Collector Current: 30A
Collector-emitter saturation voltage(Max): 2.8V @ 15V, 10A
Total Switching Energy(Ets): 141μJ (on), 215μJ (off)
Turn-on and Turn-off delay time: 15ns/36ns
Testing Conditions: 300V, 10A, 20 Ohm, 15V
Alternative Parts (Cross-Reference): STGF19NC60KD; STGF19NC60HD; STGF7NB60SL; STGF10M65DF2;
Introduction Date: April 20, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single IGBTs - SGS10N60RUFDTU - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
SGS10N60RUFDTU
Single IGBTs SGS10N60RUFDTU
IGBT 600V 16A TO220F

IGBT 600V 16A TO220F

Supplier's Site Datasheet
IGBT - 109097640 - Radwell International
Radwell International
Willingboro, NJ, United States
IGBT
109097640
IGBT 109097640
DISCONTINUED BY MANUFACTURER, INSULATED GATE BIPOLAR TRANSISTOR, 16A I(C), 600V V(BR)CES, N-CHANNEL, TO-220F. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, INSULATED GATE BIPOLAR TRANSISTOR, 16A I(C), 600V V(BR)CES, N-CHANNEL, TO-220F. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single IGBTs - SGS10N60RUFDTU-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
SGS10N60RUFDTU-ND
Single IGBTs SGS10N60RUFDTU-ND
IGBT 600V 16A 55W Through Hole TO-220F-3

IGBT 600V 16A 55W Through Hole TO-220F-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - SGS10N60RUFDTU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
SGS10N60RUFDTU
Discrete Semiconductor Products - Transistors - IGBTs SGS10N60RUFDTU
IGBT 600V 16A TO220F

IGBT 600V 16A TO220F

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
SGS10N60RUFDTU
IGBT Transistors SGS10N60RUFDTU
IGBT Transistors 600V/10A/w/FRD

IGBT Transistors 600V/10A/w/FRD

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Radwell International DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 064363-SGS10N60RUFDTU SGS10N60RUFDTU 109097640 SGS10N60RUFDTU-ND SGS10N60RUFDTU SGS10N60RUFDTU
Product Name IGBTs - Single - SGS10N60RUFDTU Single IGBTs IGBT Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
VCE(on) 2.8 volts
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