onsemi IGBTs - Single - SGS10N60RUFD SGS10N60RUFD

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 064362-SGS10N60RUFD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 60ns
Input Type: Standard
Gate Charge: 30nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Maximum Current Collector: 16A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 55W
Pulsed Collector Current: 30A
Collector-emitter saturation voltage(Max): 2.8V @ 15V, 10A
Total Switching Energy(Ets): 141μJ (on), 215μJ (off)
Turn-on and Turn-off delay time: 15ns/36ns
Testing Conditions: 300V, 10A, 20 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

IGBT 600V 16A 55W TO220F Product overview: SGS10N60RUFD from ON Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 16A, 55W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 16A, 55W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-SGS10N60RUFD can be used for catalog matching and distributor lookup.