IGBT 600V 23A 100W TO220
600V, PT IGBT, 1000-TUBE Product overview: SGP23N60UFDTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-SGP23N60UFDTU can be used for catalog matching and distributor lookup.
IGBT 600V 23A 100W Through Hole TO-220-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 794198-SGP23N60UFDTU
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Power - Max: 100W
Reverse Recovery Time (trr): 60ns
Current - Collector Pulsed (Icm): 92A
Switching Energy: 115μJ (on), 135μJ (off)
Input Type: Standard
Gate Charge: 49nC
Td (on/off) @ 25°C: 17ns/60ns
Test Condition: 300V, 12A, 23 Ohm, 15V
Family Name: SGP23N60UFD
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-220-3
Current - Collector (Ic) (Maximum): 23A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Vce(on) (Maximum) @ Vge, Ic: 2.6V @ 15V, 12A
Alternative Parts (Cross-Reference): IRGBC30KD2; IRGBC30U; IRG4BC30W; IRG4BC30UD;
Introduction Date: January 09, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
IGBT Transistors Dis High Perf IGBT
IGBT 600V 23A 100W TO220
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | SGP23N60UFDTU | 279-SGP23N60UFDTU | SGP23N60UFDTU-ND | 794198-SGP23N60UFDTU | SGP23N60UFDTU | SGP23N60UFDTU |
| Product Name | Single IGBTs | 600V IGBT Transistor | Single IGBTs | IGBTs - Single - SGP23N60UFDTU | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |