onsemi IGBTs - Single - SGP13N60UFTU SGP13N60UFTU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1095612-SGP13N60UFTU Packaging: Tube/Rail Mounting: Through Hole Input Type: Standard Gate Charge: 25nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 13A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 60W Pulsed Collector Current: 52A Collector-emitter saturation voltage(Max): 2.6V @ 15V, 6.5A Total Switching Energy(Ets): 85μJ (on), 95μJ (off) Turn-on and Turn-off delay time: 20ns/70ns Testing Conditions: 300V, 6.5A, 50 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1095612-SGP13N60UFTU Packaging: Tube/Rail Mounting: Through Hole Input Type: Standard Gate Charge: 25nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 13A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 60W Pulsed Collector Current: 52A Collector-emitter saturation voltage(Max): 2.6V @ 15V, 6.5A Total Switching Energy(Ets): 85μJ (on), 95μJ (off) Turn-on and Turn-off delay time: 20ns/70ns Testing Conditions: 300V, 6.5A, 50 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - SGP13N60UFTU - 1095612-SGP13N60UFTU - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - SGP13N60UFTU
1095612-SGP13N60UFTU
IGBTs - Single - SGP13N60UFTU 1095612-SGP13N60UFTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1095612-SGP13N60UFTU Packaging: Tube/Rail Mounting: Through Hole Input Type: Standard Gate Charge: 25nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 13A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 60W Pulsed Collector Current: 52A Collector-emitter saturation voltage(Max): 2.6V @ 15V, 6.5A Total Switching Energy(Ets): 85μJ (on), 95μJ (off) Turn-on and Turn-off delay time: 20ns/70ns Testing Conditions: 300V, 6.5A, 50 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1095612-SGP13N60UFTU
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Gate Charge: 25nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Maximum Current Collector: 13A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 60W
Pulsed Collector Current: 52A
Collector-emitter saturation voltage(Max): 2.6V @ 15V, 6.5A
Total Switching Energy(Ets): 85μJ (on), 95μJ (off)
Turn-on and Turn-off delay time: 20ns/70ns
Testing Conditions: 300V, 6.5A, 50 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
N-Channel IGBT Transistor
279-SGP13N60UFTU
N-Channel IGBT Transistor 279-SGP13N60UFTU
N-CHANNEL IGBT Product overview: SGP13N60UFTU from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-SGP13N60UFTU can be used for catalog matching and distributor lookup.

N-CHANNEL IGBT Product overview: SGP13N60UFTU from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-SGP13N60UFTU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - SGP13N60UFTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
SGP13N60UFTU
Discrete Semiconductor Products - Transistors - IGBTs SGP13N60UFTU
N-CHANNEL IGBT

N-CHANNEL IGBT

Supplier's Site
IGBT 600V 13A 60W TO220 - 598-SGP13N60UFTU - Utmel Electronic Limited
Hong Kong, China
IGBT 600V 13A 60W TO220
598-SGP13N60UFTU
IGBT 600V 13A 60W TO220 598-SGP13N60UFTU
IGBT 600V 13A 60W TO220

IGBT 600V 13A 60W TO220

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1095612-SGP13N60UFTU 279-SGP13N60UFTU SGP13N60UFTU 598-SGP13N60UFTU
Product Name IGBTs - Single - SGP13N60UFTU N-Channel IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs IGBT 600V 13A 60W TO220
VCE(on) 2.6 volts 2.1 volts
PD 60000 milliwatts 60000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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