Igbt 900V 60A Copak TO-264 Product overview: SGL60N90DG3TU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 60A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 900V, 60A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-SGL60N90DG3TU can be used for catalog matching and distributor lookup.
IGBT Trench 900V 60A 180W Through Hole TO-264-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 211598-SGL60N90DG3TU
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 1.5μs
IGBT Type: Trench
Input Type: Standard
Gate Charge: 260nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-264
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 900V
Maximum Power Dissipation: 180W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 60A
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
IGBT 900V 60A 180W TO264
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-SGL60N90DG3TU | SGL60N90DG3TU-ND | 211598-SGL60N90DG3TU | SGL60N90DG3TU |
| Product Name | 900V 60A IGBT Transistor | Single IGBTs | IGBTs - Single - SGL60N90DG3TU | Discrete Semiconductor Products - Transistors - IGBTs |
| PD | 180000 milliwatts | 180000 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
| Package Type | TO-264-3, TO-264AA | SOT3; TO-264 |