Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1095602-SGL50N60RUFD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 100ns
Input Type: Standard
Gate Charge: 145nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-264
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 250W
Pulsed Collector Current: 150A
Collector-emitter saturation voltage(Max): 2.8V @ 15V, 50A
Total Switching Energy(Ets): 1.68mJ (on), 1.03mJ (off)
Turn-on and Turn-off delay time: 26ns/66ns
Testing Conditions: 300V, 50A, 5.9 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Quantity per package: 375
600V 80A IGBT Transistor TO-264 Product overview: SGL50N60RUFDTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 80A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 80A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-SGL50N60RUFDTU can be used for catalog matching and distributor lookup.
IGBT 600V 80A 250W Through Hole TO-264-3
DISCONTINUED BY MANUFACTURER, SINGLE IGBT, 600V, 80A, 250W, 3 PIN, TO-264. FREE 2 YEAR RADWELL WARRANTY
IGBT 600V 80A 250W TO264
IGBT Transistors N-CH 600V 50A
SINGLE IGBT, 600V, 80A; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:250W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- RoHS Compliant: Yes
INSULATED GATE BIPOLAR TRANSISTO
IGBT 600V 80A TO264-3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Radwell International | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1095602-SGL50N60RUFDTU | 279-SGL50N60RUFDTU | SGL50N60RUFDTU-ND | 16137220 | 598-SGL50N60RUFDTU | SGL50N60RUFDTU | 18C8325 | SGL50N60RUFDTU | SGL50N60RUFDTU |
| Product Name | IGBTs - Single - SGL50N60RUFDTU | 600V 80A IGBT Transistor | Single IGBTs | IGBT | IGBT 600V 80A 250W TO264 | IGBT Transistors | Single Igbt, 600V, 80A; Continuous Collector Current Onsemi | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs |
| VCE(on) | 2.8 volts | 2.2 volts | |||||||
| PD | 250000 milliwatts | 250000 milliwatts | 250000 milliwatts | 250000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3; TO-264 | TO-264-3, TO-264AA | TO-3 | TO-264-3, TO-264AA | |||||
| Packing Method | Rail; Tube; Tube/Rail | Tube | Tube; Tube | Tube; Tube |
