onsemi Single IGBTs SGF5N150UFTU

Description
IGBT 1500V 10A 62.5W Through Hole TO-3PF
Request a Quote Datasheet
Description
IGBT 1500V 10A 62.5W Through Hole TO-3PF
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - SGF5N150UFTU-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
SGF5N150UFTU-ND
Single IGBTs SGF5N150UFTU-ND
IGBT 1500V 10A 62.5W Through Hole TO-3PF

IGBT 1500V 10A 62.5W Through Hole TO-3PF

Buy Now Datasheet
Single IGBTs - SGF5N150UFTU - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
SGF5N150UFTU
Single IGBTs SGF5N150UFTU
IGBT 1500V 10A 62.5W TO3PF

IGBT 1500V 10A 62.5W TO3PF

Supplier's Site Datasheet
IGBTs - Single - SGF5N150UFTU - 794193-SGF5N150UFTU - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - SGF5N150UFTU
794193-SGF5N150UFTU
IGBTs - Single - SGF5N150UFTU 794193-SGF5N150UFTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 794193-SGF5N150UFTU Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: SC-94 Power - Max: 62.5W Current - Collector Pulsed (Icm): 20A Switching Energy: 190μJ (on), 100μJ (off) Input Type: Standard Gate Charge: 30nC Td (on/off) @ 25°C: 10ns/30ns Test Condition: 600V, 5A, 10 Ohm, 10V Part Status: Obsolete(EOL) Family Name: SGF5N150UF Categories: Discrete Semiconductor Products Manufacturer Package: TO-3PF Current - Collector (Ic) (Maximum): 10A Voltage - Collector Emitter Breakdown (Maximum): 1500V Vce(on) (Maximum) @ Vge, Ic: 5.5V @ 10V, 5A Alternative Parts (Cross-Reference): SGF5N150UF; Introduction Date: December 17, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 794193-SGF5N150UFTU
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: SC-94
Power - Max: 62.5W
Current - Collector Pulsed (Icm): 20A
Switching Energy: 190μJ (on), 100μJ (off)
Input Type: Standard
Gate Charge: 30nC
Td (on/off) @ 25°C: 10ns/30ns
Test Condition: 600V, 5A, 10 Ohm, 10V
Part Status: Obsolete(EOL)
Family Name: SGF5N150UF
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-3PF
Current - Collector (Ic) (Maximum): 10A
Voltage - Collector Emitter Breakdown (Maximum): 1500V
Vce(on) (Maximum) @ Vge, Ic: 5.5V @ 10V, 5A
Alternative Parts (Cross-Reference): SGF5N150UF;
Introduction Date: December 17, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
SGF5N150UFTU
IGBT Transistors SGF5N150UFTU
IGBT Transistors 1500V / 5A

IGBT Transistors 1500V / 5A

Buy Now Datasheet
IGBT - 16137212 - Radwell International
Willingboro, NJ, United States
INSULATED GATE BIPOLAR TRANSISTOR, 10A I(C), 1500V V(BR)CES, N-CHANNEL, TO-3PF, G5N150UF MARKING. FREE 2 YEAR RADWELL WARRANTY

INSULATED GATE BIPOLAR TRANSISTOR, 10A I(C), 1500V V(BR)CES, N-CHANNEL, TO-3PF, G5N150UF MARKING. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single Igbt, 1.5Kv, 10A; Dc Collector Current Onsemi - 83C0887 - Newark, An Avnet Company
Chicago, IL, United States
Single Igbt, 1.5Kv, 10A; Dc Collector Current Onsemi
83C0887
Single Igbt, 1.5Kv, 10A; Dc Collector Current Onsemi 83C0887
SINGLE IGBT, 1.5KV, 10A; DC Collector Current:10A; Collector Emitter Saturation Voltage Vce(on):4.7V; Power Dissipation Pd:62.5W; Collector Emitter Voltage V(br)ceo:1.5kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes

SINGLE IGBT, 1.5KV, 10A; DC Collector Current:10A; Collector Emitter Saturation Voltage Vce(on):4.7V; Power Dissipation Pd:62.5W; Collector Emitter Voltage V(br)ceo:1.5kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes

Supplier's Site
Igbt, 1.5Kv, 10A, 150Deg C, 62.5W Rohs Compliant Onsemi - 54AH9635 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, 1.5Kv, 10A, 150Deg C, 62.5W Rohs Compliant Onsemi
54AH9635
Igbt, 1.5Kv, 10A, 150Deg C, 62.5W Rohs Compliant Onsemi 54AH9635
IGBT, 1.5KV, 10A, 150DEG C, 62.5W ROHS COMPLIANT: YES

IGBT, 1.5KV, 10A, 150DEG C, 62.5W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - SGF5N150UFTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
SGF5N150UFTU
Discrete Semiconductor Products - Transistors - IGBTs SGF5N150UFTU
IGBT 1500V 10A 62.5W TO3PF

IGBT 1500V 10A 62.5W TO3PF

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Radwell International Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number SGF5N150UFTU-ND SGF5N150UFTU 794193-SGF5N150UFTU SGF5N150UFTU 16137212 83C0887 54AH9635 SGF5N150UFTU
Product Name Single IGBTs Single IGBTs IGBTs - Single - SGF5N150UFTU IGBT Transistors IGBT Single Igbt, 1.5Kv, 10A; Dc Collector Current Onsemi Igbt, 1.5Kv, 10A, 150Deg C, 62.5W Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) ? to 150 C (? to 302 F) -55 to 150 C (-67 to 302 F)
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