onsemi Single IGBTs SGF23N60UFTU

Description
IGBT 600V 23A 75W Through Hole TO-3PF
Request a Quote Datasheet
Description
IGBT 600V 23A 75W Through Hole TO-3PF
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - SGF23N60UFTU-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
SGF23N60UFTU-ND
Single IGBTs SGF23N60UFTU-ND
IGBT 600V 23A 75W Through Hole TO-3PF

IGBT 600V 23A 75W Through Hole TO-3PF

Buy Now Datasheet
Single IGBTs - SGF23N60UFTU - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
SGF23N60UFTU
Single IGBTs SGF23N60UFTU
IGBT 600V 23A TO3PF

IGBT 600V 23A TO3PF

Supplier's Site Datasheet
Singapore
600V IGBT Transistor
279-SGF23N60UFTU
600V IGBT Transistor 279-SGF23N60UFTU
IGBT, 600V, PT, 360-TUBE Product overview: SGF23N60UFTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-SGF23N60UFTU can be used for catalog matching and distributor lookup.

IGBT, 600V, PT, 360-TUBE Product overview: SGF23N60UFTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-SGF23N60UFTU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - SGF23N60UFTU - 042578-SGF23N60UFTU - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - SGF23N60UFTU
042578-SGF23N60UFTU
IGBTs - Single - SGF23N60UFTU 042578-SGF23N60UFTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 042578-SGF23N60UFTU Packaging: Tube/Rail Mounting: Through Hole Input Type: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PF Maximum Current Collector: 23A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 75W Pulsed Collector Current: 92A Collector-emitter saturation voltage(Max): 2.6V @ 15V, 12A Total Switching Energy(Ets): 115μJ (on), 135μJ (off) Turn-on and Turn-off delay time: 17ns/60ns Testing Conditions: 300V, 12A, 23 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Quantity per package: 360

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 042578-SGF23N60UFTU
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PF
Maximum Current Collector: 23A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 75W
Pulsed Collector Current: 92A
Collector-emitter saturation voltage(Max): 2.6V @ 15V, 12A
Total Switching Energy(Ets): 115μJ (on), 135μJ (off)
Turn-on and Turn-off delay time: 17ns/60ns
Testing Conditions: 300V, 12A, 23 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Quantity per package: 360

Buy Now Datasheet
IGBT - 127554195 - Radwell International
Willingboro, NJ, United States
TRANSISTOR, IGBT, 600V V(BR)CES, 12A, HIGH SPEED SWITCHING, HIGH INPUT IMPEDANCE, TO-3PF-3. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, IGBT, 600V V(BR)CES, 12A, HIGH SPEED SWITCHING, HIGH INPUT IMPEDANCE, TO-3PF-3. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
SGF23N60UFTU
IGBT Transistors SGF23N60UFTU
IGBT Transistors 600V/12A

IGBT Transistors 600V/12A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - SGF23N60UFTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
SGF23N60UFTU
Discrete Semiconductor Products - Transistors - IGBTs SGF23N60UFTU
IGBT 600V 23A TO3PF

IGBT 600V 23A TO3PF

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics Radwell International VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number SGF23N60UFTU-ND SGF23N60UFTU 279-SGF23N60UFTU 042578-SGF23N60UFTU 127554195 SGF23N60UFTU SGF23N60UFTU
Product Name Single IGBTs Single IGBTs 600V IGBT Transistor IGBTs - Single - SGF23N60UFTU IGBT IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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