onsemi Single FETs, MOSFETs SFT1445-H

Description
Power Field-Effect Transistor
Request a Quote Datasheet
Description
Power Field-Effect Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - SFT1445-H - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
Single FETs, MOSFETs - SFT1445-H-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SFT1445-H-ND
Single FETs, MOSFETs SFT1445-H-ND
N-Channel 100V 17A (Ta) 1W (Ta), 35W (Tc) Through Hole IPAK/TP

N-Channel 100V 17A (Ta) 1W (Ta), 35W (Tc) Through Hole IPAK/TP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SFT1445-H - 1095450-SFT1445-H - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SFT1445-H
1095450-SFT1445-H
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SFT1445-H 1095450-SFT1445-H
Manufacturer: ON Semiconductor Win Source Part Number: 1095450-SFT1445-H Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta), 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Temperature Range - Operating: 150°C (TJ) Case / Package: TP Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 17A (Ta) Max Gate Charge: 19nC @ 10V Max Input Capacitance: 1030pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 111 mOhm @ 8.5A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1095450-SFT1445-H
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta), 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Temperature Range - Operating: 150°C (TJ)
Case / Package: TP
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 17A (Ta)
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 1030pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 111 mOhm @ 8.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SFT1445-H - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SFT1445-H
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SFT1445-H
MOSFET N-CH 100V 17A TP

MOSFET N-CH 100V 17A TP

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SFT1445-H SFT1445-H-ND 1095450-SFT1445-H SFT1445-H
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SFT1445-H Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type IPAK-3 TO-251-3 Short Leads, IPAK, TO-251AA SOT3; TP TO-251-3 Short Leads, IPak, TO-251AA
Packing Method Bulk; Bulk Bulk; Bulk Bulk; Bulk
Polarity N-Channel N-Channel; N-Channel
Unlock Full Specs
to access all available technical data