onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SFT1431-E

Description
Win Source Part Number: 1278236-SFT1431-E Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 35 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V Power Dissipation (Max): 1W (Ta), 15W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: IPAK/TP Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 20 V Vgs (Max): ±20V Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 70 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Base Product Number: SFT143 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
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Description
Win Source Part Number: 1278236-SFT1431-E Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 35 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V Power Dissipation (Max): 1W (Ta), 15W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: IPAK/TP Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 20 V Vgs (Max): ±20V Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 70 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Base Product Number: SFT143 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
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Datasheet
Datasheet Summary
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SFT1431-E is a 35 V, 11 A single N-channel MOSFET in an IPAK/TP package, intended for switching applications. It has a maximum on-resistance of 25 mΩ at 5.5 A and 10 V gate drive, and dissipates up to 15 W at Tc=25°C. The device features a gate threshold voltage range of 1.2 to 2.6 V, total gate charge of 17.3 nC, and input capacitance of 960 pF at 20 V. It is Pb-free and RoHS compliant, with a junction temperature rating of 150°C and storage temperature range from -55°C to +150°C. The package is through-hole with three terminals, and its thermal resistance from junction to case is 8.33°C/W.

Datasheet Summary
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SFT1431-E is a 35 V, 11 A single N-channel MOSFET in an IPAK/TP package, intended for switching applications. It has a maximum on-resistance of 25 mΩ at 5.5 A and 10 V gate drive, and dissipates up to 15 W at Tc=25°C. The device features a gate threshold voltage range of 1.2 to 2.6 V, total gate charge of 17.3 nC, and input capacitance of 960 pF at 20 V. It is Pb-free and RoHS compliant, with a junction temperature rating of 150°C and storage temperature range from -55°C to +150°C. The package is through-hole with three terminals, and its thermal resistance from junction to case is 8.33°C/W.

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278236-SFT1431-E - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278236-SFT1431-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278236-SFT1431-E
Win Source Part Number: 1278236-SFT1431-E Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Bulk Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 35 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V Power Dissipation (Max): 1W (Ta), 15W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: IPAK/TP Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 20 V Vgs (Max): ±20V Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 70 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Base Product Number: SFT143 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V

Win Source Part Number: 1278236-SFT1431-E
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Bulk
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 35 V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta), 15W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: IPAK/TP
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 20 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 70 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Base Product Number: SFT143
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1278236-SFT1431-E
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Polarity N-Channel
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