onsemi Single FETs, MOSFETs RFD3055SM9A

N-Channel 60V 12A (Tc) 53W (Tc) Surface Mount TO-252AA

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 294016-RFD3055SM9A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 53W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 23nC @ 20V
Max Input Capacitance: 300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 150 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

MOSFET N-CH 60V 12A DPAK Product overview: RFD3055SM9A from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 12A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 12A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RFD3055SM9A can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA