MOSFET N-CH 60V 18A TO252AA
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 013548-RFD12N06RLESM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 49W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 485pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 63 mOhm @ 18A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
N-Channel 60V 18A (Tc) 49W (Tc) Surface Mount TO-252AA
N-Channel 60V 18A (Tc) 49W (Tc) Surface Mount TO-252AA
N-Channel 60V 18A (Tc) 49W (Tc) Surface Mount TO-252AA
MOSFET, Fairchild, RFD12N06RLESM9A
MOSFET, Fairchild, RFD12N06RLESM9A
MOSFET, Fairchild, RFD12N06RLESM9A
N CHANNEL MOSFET, 60V, 17mA; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; No. of Pins:3Pins RoHS Compliant: Yes
N CHANNEL MOSFET, 60V, 17mA; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:17mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; No. of Pins:3PinsRoHS Compliant: Yes
MOSFET N-CH 60V 18A TO252AA
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RFD12N06RLESM9A | 013548-RFD12N06RLESM9A | RFD12N06RLESM9ATR-ND | 8022143 | 8022143P | 15R4044 | 05B7455 | RFD12N06RLESM9A | RFD12N06RLESM9A |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RFD12N06RLESM9A | Single FETs, MOSFETs | MOSFETs | MOSFETs | N Channel Mosfet, 60V, 17Ma; Channel Type Onsemi | N Channel Mosfet, 60V, 17Ma; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | |||||
| IDSS | 18000 milliamps | 18000 milliamps | 18000 milliamps | 17000 milliamps | 17 milliamps | ||||
| PD | 49000 milliwatts | 49000 milliwatts |
