The QSE213C is a silicon NPN infrared phototransistor in a sidelooker plastic package, designed for infrared detection with a 50° reception angle and daylight filtering. It has a collector-emitter voltage rating of 30 V, a power dissipation of 100 mW, and operates from -40°C to +100°C. The device exhibits a peak sensitivity at 880 nm and a dark current of up to 100 nA at 10 V collector-emitter voltage. Saturation voltage is limited to 0.4 V under specified conditions. It meets RoHS standards and is suitable for general optoelectronic applications.
Photo Transistor
| Rochester Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | QSE213C |
