The NXH80B120H2Q0SG is a dual boost power module featuring two N-channel IGBTs rated for 1200 V and 40 A, complemented by silicon carbide rectifiers. It includes two 15 A/1200 V SiC diodes, two 25 A/1600 V anti-parallel diodes, and two 25 A/1600 V bypass rectifiers. The IGBT has a collector-emitter saturation voltage (VCE(sat)) of 2.2 V and a maximum power dissipation of 103 W. The module operates effectively within a temperature range of -40¬8C to 150¬8C and is suitable for applications such as solar inverters and uninterruptible power supplies. The device also features an on-board thermistor for temperature monitoring.
IGBT, MODULE, N-CH, 1.2KV, 40A; Transistor Polarity:N Channel; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.2V; Power Dissipation Pd:103W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes
IGBT Modules PIM 1200V 40A DU BST SiC DIODE
PIM 1200V, 40A DUAL BOOST
| Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 48AC1760 | NXH80B120H2Q0SG | NXH80B120H2Q0SG |
| Product Name | Igbt, Module, N-Ch, 1.2Kv, 40A; Transistor Polarity Onsemi | IGBT Modules | Discrete Semiconductor Products - Transistors - IGBTs |
| PD | 103000 milliwatts |
