Insulated Gate Bipolar Transistor, 167A I(C), 650V V(BR)CES, N-Channel
IGBT MOD 650V 167A 365W 40-PIM
120KW 1100V Q2PACK
| Rochester Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | NXH450N65L4Q2F2S1G | 488-NXH450N65L4Q2F2S1G-ND | NXH450N65L4Q2F2S1G | NXH450N65L4Q2F2S1G |
| Product Name | IGBT Modules | IGBT Modules | Discrete Semiconductor Products - Transistors - IGBTs | |
| Package Type | PIM-Q2 | Module | Module |
