onsemi FET, MOSFET Arrays NXH015F120M3F1P1TG

The NXH015F120M3F1P1TG is a silicon carbide (SiC) MOSFET full-bridge power module in an F1 package (Case 180HL), configured for 1200 V operation with a rated on-resistance of 15 mΩ. It incorporates press-fit pins and pre-applied thermal interface material, with a thermistor for temperature monitoring. The module supports continuous drain current up to 77 A at 80 °C case temperature, a pulsed drain current of 232 A, and a maximum junction temperature of 175 °C. Thermal resistance from junction to case is 0.48 °C/W, and it features 4800 V RMS isolation. The device is RoHS compliant, lead-free, and halide-free, designed for solar inverters, EV charging stations, and industrial power applications.