onsemi FET, MOSFET Arrays NXH008T120M3F2PTHG

The NXH008T120M3F2PTHG is a 1200 V silicon carbide MOSFET power module in an F2 package with TNPC topology, designed for solar inverters, uninterruptible power supplies, electric vehicle charging stations, and industrial power applications. It features press-fit pins, a thermistor, and pre-applied thermal interface material. The module measures 56.7 mm × 42.5 mm × 12.00 mm and is housed in Case 180HR. It supports a continuous drain current of 129 A at Tc = 80 °C, a pulsed drain current of 387 A, and a maximum junction temperature of 175 °C. The device is RoHS compliant, Pb-free, and halide-free, with an isolation test voltage of 4800 VRMS and a creepage distance of 12.7 mm.