The NVXK2VR80WDT2 is a 3-phase silicon carbide MOSFET bridge module designed for on-board charger applications in electric vehicles. It is packaged in an APM32 case measuring 44.00 mm × 28.80 mm × 5.70 mm, with a drain-to-source voltage rating of 1200 V and a continuous drain current of 20 A at 25°C case temperature. The module features a maximum RDS(on) of 116 mΩ at 20 V gate-source voltage and 175°C junction temperature, and includes integrated NTC thermistors for temperature monitoring. It is automotive qualified per AEC-Q101 and AQG324, RoHS and UL94V-0 compliant, and supports operation from −55°C to 175°C junction temperature. Thermal resistance junction-to-case is 1.41°C/W typ. The module is designed for low total resistance and full traceability via serialization.
MOSFET 6N-CH 1200V 20A APM32
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 5556-NVXK2VR80WDT2-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | "32-PowerDIP Module (1.449"", 36.80mm)" |