onsemi Single FETs, MOSFETs NVTFS5820NLWFTWG

N-Channel 60V 11A (Ta) 3.2W (Ta), 21W (Tc) Surface Mount 8-WDFN (3.3x3.3)

Power MOSFET 60V, 29A, 11.5 mOhm, Single N-Channel, u8FL, Logic Level., WDFN8 3.3x3.3, 0.65P, 5000-REEL Product overview: NVTFS5820NLWFTWG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 29A, 11.5 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 29A, 11.5 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVTFS5820NLWFTWG can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 807779-NVTFS5820NLWFTWG
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: 8-PowerWDFN
Power Dissipation (Maximum): 3.2W , 21W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 5,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 11.5mOhm at 8.7A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 28nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1462pF at 25V
Current - Continuous Drain (Id) at 25°C: 11A
Vgs(th) (Maximum) at Id: 2.3V at 250μA
Maximum Vgs: ±20V