MOSFET P-CH 60V 6A 8WDFN
P-Channel 60V 6A (Ta) 3.2W (Ta), 21W (Tc) Surface Mount 8-WDFN (3.3x3.3)
P-Channel 60V 6A (Ta) 3.2W (Ta), 21W (Tc) Surface Mount 8-WDFN (3.3x3.3)
P-Channel 60V 6A (Ta) 3.2W (Ta), 21W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Manufacturer: ON Semiconductor
Win Source Part Number: 1232731-NVTFS5116PLW
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: 8-PowerWDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: 8-WDFN (3.3x3.3)
Channel Type Type: P
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1258pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 3.2W (Ta), 21W (Tc)
Rds On (Maximum) @ Id, Vgs: 52 mOhm @ 7A, 10V
Alternative Parts (Cross-Reference): DMP6050SFG-7; DMP6050SFG-13; Si7415DN-T1-E3;
Estimated EOL Date: 2026
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Single P-Channel Power MOSFET -60V, -14A, 52mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL Product overview: NVTFS5116PLWFTAG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, -14A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, -14A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVTFS5116PLWFTAG
MOSFET P-CH 60V 6A 8WDFN
MOSFET Pwr MOSFET 60V 14A 52mOhm SGL P-CH
MOSFET, AEC-Q101, P-CH, -60V, WDFN; Transistor Polarity:P Channel; Continuous Drain Current Id:-14A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NVTFS5116PLWFTAG | 488-NVTFS5116PLWFTAGTR-ND | 1232731-NVTFS5116PLWFTAG | 278-NVTFS5116PLWFTAG | NVTFS5116PLWFTAG | NVTFS5116PLWFTAG | 50AC6529 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVTFS5116PLWFTAG | P-Channel -60V -14A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, P-Ch, -60V, Wdfn; Transistor Polarity Onsemi |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | ||||||
| IDSS | 6000 milliamps | -14000 milliamps | |||||
| PD | 3200 milliwatts | 3200 to 21000 milliwatts | 3200 milliwatts |
