onsemi Single FETs, MOSFETs NVNJWS5K0P061LTAG

Description
MOSFET - POWER, P-CHANNEL WITH E
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Description
MOSFET - POWER, P-CHANNEL WITH E
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Datasheet
Datasheet Summary
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P-channel MOSFET with ESD protection for small signal load switching, housed in an XDFNW3 package measuring 1.0 mm × 1.5 mm. It has a drain-to-source voltage rating of -60 V, a continuous drain current of -482 mA at TC = 25 °C, and a gate-to-source voltage of ±20 V. The device meets AEC-Q101 qualification and is Pb-free. Junction-to-ambient thermal resistance is 104 °C/W, and operating junction temperature ranges from -55 °C to +175 °C.

Datasheet Summary
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P-channel MOSFET with ESD protection for small signal load switching, housed in an XDFNW3 package measuring 1.0 mm × 1.5 mm. It has a drain-to-source voltage rating of -60 V, a continuous drain current of -482 mA at TC = 25 °C, and a gate-to-source voltage of ±20 V. The device meets AEC-Q101 qualification and is Pb-free. Junction-to-ambient thermal resistance is 104 °C/W, and operating junction temperature ranges from -55 °C to +175 °C.

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Single FETs, MOSFETs - 488-NVNJWS5K0P061LTAG-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-NVNJWS5K0P061LTAG-ND
Single FETs, MOSFETs 488-NVNJWS5K0P061LTAG-ND
MOSFET - POWER, P-CHANNEL WITH E

MOSFET - POWER, P-CHANNEL WITH E

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 488-NVNJWS5K0P061LTAG-ND
Product Name Single FETs, MOSFETs
Polarity P-Channel
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