P-channel MOSFET with ESD protection for small signal load switching, housed in an XDFNW3 package measuring 1.0 mm × 1.5 mm. It has a drain-to-source voltage rating of -60 V, a continuous drain current of -482 mA at TC = 25 °C, and a gate-to-source voltage of ±20 V. The device meets AEC-Q101 qualification and is Pb-free. Junction-to-ambient thermal resistance is 104 °C/W, and operating junction temperature ranges from -55 °C to +175 °C.
MOSFET - POWER, P-CHANNEL WITH E
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 488-NVNJWS5K0P061LTAG-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | P-Channel |