onsemi Single FETs, MOSFETs NVMYS7D0N06CTWG

The NVMYS7D0N06CTWG is an N-channel MOSFET designed for power switching applications, featuring a 60 V drain-source breakdown voltage, a maximum on-state resistance of 7.0 mΩ at 10 V gate voltage, and a continuous drain current of 66 A at 25°C case temperature. It is packaged in an LFPAK4 (5x6 mm) surface-mount case, rated for operation from -55°C to +175°C junction temperature, and meets AEC-Q101 qualifications with PPAP capability. The device is Pb-free and RoHS compliant. Thermal resistance is 2.45°C/W junction-to-case and 37.6°C/W junction-to-ambient when mounted on a 650 mm², 2 oz. Cu FR4 board.