onsemi N-Channel 100V 114A MOSFET Transistor NVMFS6B05NLT1G

Single N-Channel Power MOSFET 100V, 114A, 5.6mΩ, 1500-REEL Product overview: NVMFS6B05NLT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 114A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 114A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVMFS6B05NLT1G can be used for catalog matching and distributor lookup.

N-Channel 100V 114A (Tc) 3.8W (Ta), 165W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

Win Source Part Number: 1214638-NVMFS6B05NLT1G
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 165W (Tc)
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
Vgs (Max): ±16V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 46 pct.
MSL Level: Vendor Undefined
REACH Status: REACH Unaffected
Mfr: onsemi
Other Names: 2156-NVMFS6B05NLT1G-488
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V