onsemi FETs - Single - NVMFS5885NLT1G NVMFS5885NLT1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 803831-NVMFS5885NLT1 G Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: 8-PowerTDFN Power Dissipation (Maximum): 3.7W , 54W (Tc) Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,500 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 15mOhm at 15A, 10V Gate Charge (Qg) (Maximum) at Vgs: 21nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 1340pF at 25V Current - Continuous Drain (Id) at 25°C: 10.2A Vgs(th) (Maximum) at Id: 2.5V at 250μA Maximum Vgs: ±20V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 803831-NVMFS5885NLT1 G Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: 8-PowerTDFN Power Dissipation (Maximum): 3.7W , 54W (Tc) Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,500 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 15mOhm at 15A, 10V Gate Charge (Qg) (Maximum) at Vgs: 21nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 1340pF at 25V Current - Continuous Drain (Id) at 25°C: 10.2A Vgs(th) (Maximum) at Id: 2.5V at 250μA Maximum Vgs: ±20V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - NVMFS5885NLT1G - 803831-NVMFS5885NLT1G - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - NVMFS5885NLT1G
803831-NVMFS5885NLT1G
FETs - Single - NVMFS5885NLT1G 803831-NVMFS5885NLT1G
Manufacturer: ON Semiconductor Win Source Part Number: 803831-NVMFS5885NLT1 G Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: 8-PowerTDFN Power Dissipation (Maximum): 3.7W , 54W (Tc) Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,500 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 15mOhm at 15A, 10V Gate Charge (Qg) (Maximum) at Vgs: 21nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 1340pF at 25V Current - Continuous Drain (Id) at 25°C: 10.2A Vgs(th) (Maximum) at Id: 2.5V at 250μA Maximum Vgs: ±20V

Manufacturer: ON Semiconductor
Win Source Part Number: 803831-NVMFS5885NLT1G
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: 8-PowerTDFN
Power Dissipation (Maximum): 3.7W , 54W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 15mOhm at 15A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 21nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1340pF at 25V
Current - Continuous Drain (Id) at 25°C: 10.2A
Vgs(th) (Maximum) at Id: 2.5V at 250μA
Maximum Vgs: ±20V

Buy Now
Single FETs, MOSFETs - NVMFS5885NLT1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NVMFS5885NLT1GOSTR-ND
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N-Channel 60V 10.2A (Ta) 3.7W (Ta), 54W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

N-Channel 60V 10.2A (Ta) 3.7W (Ta), 54W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

Buy Now Datasheet
Single FETs, MOSFETs - NVMFS5885NLT1G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NVMFS5885NLT1G
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Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NVMFS5885NLT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs NVMFS5885NLT1G
MOSFET N-CH 60V 10.2A 5DFN

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Supplier's Site
Sheung Wan, Hong Kong
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Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 803831-NVMFS5885NLT1G NVMFS5885NLT1GOSTR-ND NVMFS5885NLT1G NVMFS5885NLT1G NVMFS5885NLT1G
Product Name FETs - Single - NVMFS5885NLT1G Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
QG 21 nC
PD 3700 to 54000 milliwatts 3700 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads
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