onsemi N-Channel 60V 11.2A DFN MOSFET Transistor NVMFS5844NLT1G

N-Channel Power MOSFET, 60V, 12mR, DFN, 11.2A Product overview: NVMFS5844NLT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 11.2A, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 11.2A, DFN, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVMFS5844NLT1G can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 725782-NVMFS5844NLT1G
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: 8-PowerTDFN
Power Dissipation (Maximum): 3.7W, 107W
Alternative Parts (Cross-Reference): NTMFS5844NLT1G; NVMFS5844NLT3G; NVMFS5844NLWFT1G;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 11.2A
Rds On (Maximum) at Id, Vgs: 12mOhm at 10A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 30nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1460pF at 25V

N-Channel 60V 11.2A (Ta) 3.7W (Ta), 107W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)