onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMFD5873NLT1G NVMFD5873NLT1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1232726-NVMFD5873NLT 1G Packaging: Reel - TR Operating Temperature Range: -55°C ~ 175°C (TJ) Package: 8-PowerTDFN Mounting: SMD FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Current - Continuous Drain (Id) @ 25°C: 10A Power - Max: 3.1W Family Name: NVMFD5873NL Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetr ical) Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 2.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 30.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1560pF @ 25V Rds On (Maximum) @ Id, Vgs: 13 mOhm @ 15A, 10V Introduction Date: February 13, 2013 ECCN: EAR99 Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMFD5873NLT1G - 1232726-NVMFD5873NLT1G - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - NVMFD5873NLT1GOSTR-ND - DigiKey
    DigiKey
  • Mosfet, Aec-Q101, Dual N-Ch, 60V, Dfn; Msl Onsemi - 31AC1104 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NVMFD5873NLT1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 1232726-NVMFD5873NLT 1G Packaging: Reel - TR Operating Temperature Range: -55°C ~ 175°C (TJ) Package: 8-PowerTDFN Mounting: SMD FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Current - Continuous Drain (Id) @ 25°C: 10A Power - Max: 3.1W Family Name: NVMFD5873NL Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetr ical) Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 2.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 30.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1560pF @ 25V Rds On (Maximum) @ Id, Vgs: 13 mOhm @ 15A, 10V Introduction Date: February 13, 2013 ECCN: EAR99 Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMFD5873NLT1G - 1232726-NVMFD5873NLT1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMFD5873NLT1G
1232726-NVMFD5873NLT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMFD5873NLT1G 1232726-NVMFD5873NLT1G
Manufacturer: ON Semiconductor Win Source Part Number: 1232726-NVMFD5873NLT 1G Packaging: Reel - TR Operating Temperature Range: -55°C ~ 175°C (TJ) Package: 8-PowerTDFN Mounting: SMD FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Current - Continuous Drain (Id) @ 25°C: 10A Power - Max: 3.1W Family Name: NVMFD5873NL Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetr ical) Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 2.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 30.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1560pF @ 25V Rds On (Maximum) @ Id, Vgs: 13 mOhm @ 15A, 10V Introduction Date: February 13, 2013 ECCN: EAR99 Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 1232726-NVMFD5873NLT1G
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: 8-PowerTDFN
Mounting: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 10A
Power - Max: 3.1W
Family Name: NVMFD5873NL
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 30.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1560pF @ 25V
Rds On (Maximum) @ Id, Vgs: 13 mOhm @ 15A, 10V
Introduction Date: February 13, 2013
ECCN: EAR99
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel Dual 60V 58A MOSFET Transistor
289-NVMFD5873NLT1G
N-Channel Dual 60V 58A MOSFET Transistor 289-NVMFD5873NLT1G
Power MOSFET 60V, 58A, 13 mOhm, Dual N-Channel, SO8-FL, Logic Level., DFN8 5x6, 1.27P Dual Flag (SO8FL-Dual), 1500-REEL Product overview: NVMFD5873NLT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 60V, 58A, 13 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 60V, 58A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NVMFD5873NLT1G can be used for catalog matching and distributor lookup.

Power MOSFET 60V, 58A, 13 mOhm, Dual N-Channel, SO8-FL, Logic Level., DFN8 5x6, 1.27P Dual Flag (SO8FL-Dual), 1500-REEL Product overview: NVMFD5873NLT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 60V, 58A, 13 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 60V, 58A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NVMFD5873NLT1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - NVMFD5873NLT1GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NVMFD5873NLT1GOSTR-ND
FET, MOSFET Arrays NVMFD5873NLT1GOSTR-ND
Mosfet Array 2 N-Channel (Dual) 60V 10A 3.1W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)

Mosfet Array 2 N-Channel (Dual) 60V 10A 3.1W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
NVMFD5873NLT1G
MOSFET NVMFD5873NLT1G
MOSFET NFET SO8FL 60V 58A 13MOHM

MOSFET NFET SO8FL 60V 58A 13MOHM

Buy Now Datasheet
Mosfet, Aec-Q101, Dual N-Ch, 60V, Dfn; Msl Onsemi - 31AC1104 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, Dual N-Ch, 60V, Dfn; Msl Onsemi
31AC1104
Mosfet, Aec-Q101, Dual N-Ch, 60V, Dfn; Msl Onsemi 31AC1104
MOSFET, AEC-Q101, DUAL N-CH, 60V, DFN; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017) RoHS Compliant: Yes

MOSFET, AEC-Q101, DUAL N-CH, 60V, DFN; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017) RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NVMFD5873NLT1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NVMFD5873NLT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NVMFD5873NLT1G
MOSFET 2N-CH 60V 10A 8DFN

MOSFET 2N-CH 60V 10A 8DFN

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1232726-NVMFD5873NLT1G 289-NVMFD5873NLT1G NVMFD5873NLT1GOSTR-ND NVMFD5873NLT1G 31AC1104 NVMFD5873NLT1G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMFD5873NLT1G N-Channel Dual 60V 58A MOSFET Transistor FET, MOSFET Arrays MOSFET Mosfet, Aec-Q101, Dual N-Ch, 60V, Dfn; Msl Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
QG 30.5 nC
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F)
Package Type SOT3 8-PowerTDFN TO-3 8-PowerTDFN
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