Power MOSFET 60V, 58A, 13 mOhm, Dual N-Channel, SO8-FL, Logic Level., DFN8 5x6, 1.27P Dual Flag (SO8FL-Dual), 1500-REEL Product overview: NVMFD5873NLT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 60V, 58A, 13 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 60V, 58A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NVMFD5873NLT1G can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 60V 10A 3.1W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Manufacturer: ON Semiconductor
Win Source Part Number: 1232726-NVMFD5873NLT
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: 8-PowerTDFN
Mounting: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 10A
Power - Max: 3.1W
Family Name: NVMFD5873NL
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetr
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 30.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1560pF @ 25V
Rds On (Maximum) @ Id, Vgs: 13 mOhm @ 15A, 10V
Introduction Date: February 13, 2013
ECCN: EAR99
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
MOSFET NFET SO8FL 60V 58A 13MOHM
MOSFET, AEC-Q101, DUAL N-CH, 60V, DFN; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017) RoHS Compliant: Yes
MOSFET 2N-CH 60V 10A 8DFN
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-NVMFD5873NLT1G | NVMFD5873NLT1GOSTR-ND | 1232726-NVMFD5873NLT1G | NVMFD5873NLT1G | 31AC1104 | NVMFD5873NLT1G |
| Product Name | N-Channel Dual 60V 58A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMFD5873NLT1G | MOSFET | Mosfet, Aec-Q101, Dual N-Ch, 60V, Dfn; Msl Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||||
| PD | 3100 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | 8-PowerTDFN | SOT3 | TO-3 | 8-PowerTDFN |
