SICFET N-CH 1200V 31A TO247-3
N-Channel 1200V 31A (Tc) 178W (Tc) Through Hole TO-247-3
Power Field-Effect Transistor, 31A I(D), 1200V, 0.11ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
SICFET N-CH 1200V 31A TO247-3
MOSFET, N-CH, 1.2KV, 31A, TO-247 ROHS COMPLIANT: YES
| ODG (Origin Data Global) | DigiKey | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NVHL080N120SC1A | 5556-NVHL080N120SC1A-ND | NVHL080N120SC1A | NVHL080N120SC1A | 82AH7673 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 1.2Kv, 31A, To-247 Rohs Compliant Onsemi | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | |||
| V(BR)DSS | 1200 volts | ||||
| IDSS | 31000 milliamps | ||||
| PD | 178000 milliwatts |
