Power Field-Effect Transistor, 31A I(D), 1200V, 0.11ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
N-Channel 1200V 31A (Tc) 178W (Tc) Through Hole TO-247-3
SICFET N-CH 1200V 31A TO247-3
MOSFET, N-CH, 1.2KV, 31A, TO-247 ROHS COMPLIANT: YES
SICFET N-CH 1200V 31A TO247-3
| Rochester Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NVHL080N120SC1A | 5556-NVHL080N120SC1A-ND | NVHL080N120SC1A | 82AH7673 | NVHL080N120SC1A |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 1.2Kv, 31A, To-247 Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| rDS(on) | 0.1100 ohms | ||||
| Package Type | TO-247; TO-247 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 | Through Hole |
| Packing Method | Tube; Tube | Tube; Tube | |||
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) |
