onsemi Single FETs, MOSFETs NVHL045N065SC1

The NVHL045N065SC1 is a 650 V silicon carbide MOSFET in a TO-247-3L package, designed for automotive on-board chargers and DC-DC converters. It has a maximum drain-source on-resistance of 50 mΩ at 18 V gate voltage and 66 A continuous drain current at 25°C case temperature. The device features a gate charge of 105 nC, output capacitance of 162 pF, and is 100% avalanche tested. It operates with a junction temperature range of -55°C to +175°C and is AEC-Q101 qualified and RoHS compliant with exemption 7a. The maximum power dissipation is 291 W at 25°C case temperature with a junction-to-case thermal resistance of 0.52°C/W.