MOSFET N-CH 40V 23A DPAK
Single N-Channel Power MOSFET 40V, 23A, 31mΩ Power MOSFET 40V 23A 31 mOhm Single N-Channel DPAK, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL Product overview: NVD5807NT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 40V, 23A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 40V, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVD5807NT4G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 1232712-NVD5807NT4G
Manufacturer Homepage: www.onsemi.com
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
N-Channel 40V 23A (Tc) 33W (Tc) Surface Mount DPAK
MOSFET N-CH 40V 23A DPAK
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NVD5807NT4G | 278-NVD5807NT4G | 1232712-NVD5807NT4G | NVD5807NT4GOSTR-ND | NVD5807NT4G | NVD5807NT4G |
| Product Name | Single FETs, MOSFETs | N-Channel SMD 40V 23A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5807NT4G | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 40 volts | |||||
| IDSS | 23000 milliamps | |||||
| PD | 33000 milliwatts | 33000 milliwatts |