onsemi FETs - Single - NVD3055L170T4G NVD3055L170T4G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 812365-NVD3055L170T4 G Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 1.5W , 28.5W Popularity: Low Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 170mOhm at 4.5A, 5V Gate Charge (Qg) (Maximum) at Vgs: 10nC at 5V Input Capacitance (Ciss) (Maximum) at Vds: 275pF at 25V Current - Continuous Drain (Id) at 25°C: 9A Vgs(th) (Maximum) at Id: 2V at 250μA Maximum Vgs: ±15V
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 812365-NVD3055L170T4 G Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 1.5W , 28.5W Popularity: Low Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 170mOhm at 4.5A, 5V Gate Charge (Qg) (Maximum) at Vgs: 10nC at 5V Input Capacitance (Ciss) (Maximum) at Vds: 275pF at 25V Current - Continuous Drain (Id) at 25°C: 9A Vgs(th) (Maximum) at Id: 2V at 250μA Maximum Vgs: ±15V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - NVD3055L170T4G - 812365-NVD3055L170T4G - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - NVD3055L170T4G
812365-NVD3055L170T4G
FETs - Single - NVD3055L170T4G 812365-NVD3055L170T4G
Manufacturer: ON Semiconductor Win Source Part Number: 812365-NVD3055L170T4 G Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 1.5W , 28.5W Popularity: Low Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 170mOhm at 4.5A, 5V Gate Charge (Qg) (Maximum) at Vgs: 10nC at 5V Input Capacitance (Ciss) (Maximum) at Vds: 275pF at 25V Current - Continuous Drain (Id) at 25°C: 9A Vgs(th) (Maximum) at Id: 2V at 250μA Maximum Vgs: ±15V

Manufacturer: ON Semiconductor
Win Source Part Number: 812365-NVD3055L170T4G
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 1.5W , 28.5W
Popularity: Low
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 170mOhm at 4.5A, 5V
Gate Charge (Qg) (Maximum) at Vgs: 10nC at 5V
Input Capacitance (Ciss) (Maximum) at Vds: 275pF at 25V
Current - Continuous Drain (Id) at 25°C: 9A
Vgs(th) (Maximum) at Id: 2V at 250μA
Maximum Vgs: ±15V

Buy Now
Singapore, Singapore
N-Channel 60V 9A DPAK MOSFET Transistor
278-NVD3055L170T4G
N-Channel 60V 9A DPAK MOSFET Transistor 278-NVD3055L170T4G
N-Channel Power Logic Level MOSFET 60V, 9A, 170mΩ Power MOSFET 60V 9A 170 mOhm Single N-Channel DPAK Logic Level, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NVD3055L170T4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 9A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 9A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVD3055L170T4G can be used for catalog matching and distributor lookup.

N-Channel Power Logic Level MOSFET 60V, 9A, 170mΩ Power MOSFET 60V 9A 170 mOhm Single N-Channel DPAK Logic Level, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NVD3055L170T4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 9A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 9A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVD3055L170T4G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - NVD3055L170T4GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NVD3055L170T4GOSTR-ND
Single FETs, MOSFETs NVD3055L170T4GOSTR-ND
N-Channel 60V 9A (Ta) 1.5W (Ta), 28.5W (Tj) Surface Mount DPAK

N-Channel 60V 9A (Ta) 1.5W (Ta), 28.5W (Tj) Surface Mount DPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NVD3055L170T4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NVD3055L170T4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NVD3055L170T4G
MOSFET N-CH 60V 9A DPAK

MOSFET N-CH 60V 9A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET NFET DPAK 60V 9A 170MOHM

MOSFET NFET DPAK 60V 9A 170MOHM

Buy Now Datasheet
Single FETs, MOSFETs - NVD3055L170T4G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NVD3055L170T4G
Single FETs, MOSFETs NVD3055L170T4G
MOSFET N-CH 60V 9A DPAK

MOSFET N-CH 60V 9A DPAK

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 812365-NVD3055L170T4G 278-NVD3055L170T4G NVD3055L170T4GOSTR-ND NVD3055L170T4G NVD3055L170T4G NVD3055L170T4G
Product Name FETs - Single - NVD3055L170T4G N-Channel 60V 9A DPAK MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Single FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
QG 10 nC
PD 1500 to 28500 milliwatts 1500 milliwatts 1500 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; TO-252 (DPAK) TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
Unlock Full Specs
to access all available technical data

Similar Products

CSD17304Q3 30V N-Channel NexFET? Power MOSFET - CSD17304Q3 - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 30 volts
rDS(on) 0.0088 ohms
View Details
8 suppliers
High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - 2N6770 - 2N6770 - Infineon Technologies AG
Specs
Polarity N-Channel; N
Package Type M-TO204-3
Packing Method Tray; TRAY
View Details
2 suppliers
Power MOSFETs - SuperFAP-E3 Model: FMP10N60E - Fuji Electric Corp. of America
Fuji Electric Corp. of America
Specs
V(BR)DSS 600 volts
rDS(on) 0.7900 ohms
IDSS 10000 milliamps
View Details