N-Channel Power Logic Level MOSFET 60V, 9A, 170mΩ Power MOSFET 60V 9A 170 mOhm Single N-Channel DPAK Logic Level, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NVD3055L170T4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 9A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 9A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVD3055L170T4G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 812365-NVD3055L170T4
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 1.5W , 28.5W
Popularity: Low
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 170mOhm at 4.5A, 5V
Gate Charge (Qg) (Maximum) at Vgs: 10nC at 5V
Input Capacitance (Ciss) (Maximum) at Vds: 275pF at 25V
Current - Continuous Drain (Id) at 25°C: 9A
Vgs(th) (Maximum) at Id: 2V at 250μA
Maximum Vgs: ±15V
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| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-NVD3055L170T4G | 812365-NVD3055L170T4G | NVD3055L170T4GOSTR-ND | NVD3055L170T4G | NVD3055L170T4G | NVD3055L170T4G |
| Product Name | N-Channel 60V 9A DPAK MOSFET Transistor | FETs - Single - NVD3055L170T4G | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| PD | 1500 milliwatts | 1500 to 28500 milliwatts | 1500 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| QG | 10 nC | |||||
| Package Type | SOT3; TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
