onsemi N-Channel 650 V 30 A MOSFET Transistor NVB110N65S3F

Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 30 A, 110 mΩ, D2PAK, 800-REEL Product overview: NVB110N65S3F from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 30 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 30 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVB110N65S3F can be used for catalog matching and distributor lookup.

N-Channel 650V 30A (Tc) 240W (Tc) Surface Mount D²PAK-3 (TO-263-3)

MOSFET N-CH 650V 30A D2PAK-3

MOSFET N-CH 650V 30A D2PAK-3

Manufacturer: onsemi
Win Source Part Number: 1324087-NVB110N65S3F
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Bulk
Standard Package: 1
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 5V @ 3mA
Power Dissipation (Max): 240W (Tc)
Supplier Device Package: D²PAK-3 (TO-263-3)
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 400 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Fake Threat In the Open Market: 83
REACH Status: Vendor Undefined
Other Part Number: 2156-NVB110N65S3F-488
Drive Voltage (Max Rds On, Min Rds On): 10V
Moisture Sensitivity Level (MSL): Vendor Undefined

SINGLE N-CHANNEL POWER MOSFET SU