P-Channel MOSFET -60V, 5.7A, 52mΩ, WDFN8 Product overview: NTTFS5116PLTAG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, 5.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, 5.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTTFS5116PLTAG can be used for catalog matching and distributor lookup.
MOSFET P-CH 60V 5.7A 8WDFN
P-Channel 60V 5.7A (Ta) 3.2W (Ta), 40W (Tc) Surface Mount 8-WDFN (3.3x3.3)
P-Channel 60V 5.7A (Ta) 3.2W (Ta), 40W (Tc) Surface Mount 8-WDFN (3.3x3.3)
P-Channel 60V 5.7A (Ta) 3.2W (Ta), 40W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Manufacturer: ON Semiconductor
Win Source Part Number: 803673-NTTFS5116PLTA
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: 8-PowerWDFN
Power Dissipation (Maximum): 3.2W , 40W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 52mOhm at 6A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1258pF at 30V
Current - Continuous Drain (Id) at 25°C: 5.7A
Vgs(th) (Maximum) at Id: 3V at 250μA
Maximum Vgs: ±20V
MOSFET P-Channel 60V 20A 52mOhm WDFN8
MOSFET P-Channel 60V 20A 52mOhm WDFN8
MOSFET P-Channel 60V 20A 52mOhm WDFN8
MOSFET, P-CH, 60V, 5.7A, 175DEG C, 3.2W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET P-CH 60V 5.7A 8WDFN
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-NTTFS5116PLTAG | NTTFS5116PLTAG | NTTFS5116PLTAGOSTR-ND | 803673-NTTFS5116PLTAG | 7804786P | 7804786 | NTTFS5116PLTAG | 81Y7059 | NTTFS5116PLTAG |
| Product Name | P-Channel -60V 5.7A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | FETs - Single - NTTFS5116PLTAG | MOSFETs | MOSFETs | MOSFET | Mosfet, P-Ch, 60V, 5.7A, 175Deg C, 3.2W; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | |||
| PD | 40000 milliwatts | 3200 milliwatts | 3200 to 40000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 60 volts |
