onsemi Single FETs, MOSFETs NTTFS4824NTAG

Description
N-Channel 30V 8.3A (Ta), 69A (Tc) 660mW (Ta), 46.3W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Request a Quote Datasheet
Description
N-Channel 30V 8.3A (Ta), 69A (Tc) 660mW (Ta), 46.3W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - NTTFS4824NTAGOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTTFS4824NTAGOSTR-ND
Single FETs, MOSFETs NTTFS4824NTAGOSTR-ND
N-Channel 30V 8.3A (Ta), 69A (Tc) 660mW (Ta), 46.3W (Tc) Surface Mount 8-WDFN (3.3x3.3)

N-Channel 30V 8.3A (Ta), 69A (Tc) 660mW (Ta), 46.3W (Tc) Surface Mount 8-WDFN (3.3x3.3)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTFS4824NTAG - 060705-NTTFS4824NTAG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTFS4824NTAG
060705-NTTFS4824NTAG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTFS4824NTAG 060705-NTTFS4824NTAG
Manufacturer: ON Semiconductor Win Source Part Number: 060705-NTTFS4824NTAG Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 660mW (Ta), 46.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-WDFN (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8.3A (Ta), 69A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 29nC @ 11.5V Max Input Capacitance: 2363pF @ 12V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 060705-NTTFS4824NTAG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 660mW (Ta), 46.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-WDFN (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.3A (Ta), 69A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 29nC @ 11.5V
Max Input Capacitance: 2363pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET NFET U8FL 30V 69A 7.5mOhm

MOSFET NFET U8FL 30V 69A 7.5mOhm

Buy Now Datasheet
N Channel Mosfet, 30V, 14.9A, Wdfn8; Channel Type Onsemi - 05R9187 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 14.9A, Wdfn8; Channel Type Onsemi
05R9187
N Channel Mosfet, 30V, 14.9A, Wdfn8; Channel Type Onsemi 05R9187
N CHANNEL MOSFET, 30V, 14.9A, WDFN8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:20.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.9V RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 14.9A, WDFN8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:20.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.9V RoHS Compliant: Yes

Supplier's Site
Mosfet, N-Ch, 30V, 69A, Wdfn; Transistor Polarity Onsemi - 13AC3904 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 69A, Wdfn; Transistor Polarity Onsemi
13AC3904
Mosfet, N-Ch, 30V, 69A, Wdfn; Transistor Polarity Onsemi 13AC3904
MOSFET, N-CH, 30V, 69A, WDFN; Transistor Polarity:N Channel; Continuous Drain Current Id:69A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 30V, 69A, WDFN; Transistor Polarity:N Channel; Continuous Drain Current Id:69A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTTFS4824NTAG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTTFS4824NTAG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTTFS4824NTAG
MOSFET N-CH 30V 8.3A/69A 8WDFN

MOSFET N-CH 30V 8.3A/69A 8WDFN

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTTFS4824NTAGOSTR-ND 060705-NTTFS4824NTAG NTTFS4824NTAG 05R9187 13AC3904 NTTFS4824NTAG
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTFS4824NTAG MOSFET N Channel Mosfet, 30V, 14.9A, Wdfn8; Channel Type Onsemi Mosfet, N-Ch, 30V, 69A, Wdfn; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type 8-PowerWDFN SOT3; 8-WDFN (3.3x3.3) TO-3 TO-3 2363 pF @ 12 V
V(BR)DSS 30 volts
PD 660 to 46300 milliwatts
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