P-Channel JFET, -30V, -1.2A, 165mR, SOT-323 Product overview: NTS4173PT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -30V, -1.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, -1.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTS4173PT1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 025832-NTS4173PT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 290mW (Ta)
Family Name: NTS4173P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-3 (SOT323)
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.2A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 10.1nC @ 10V
Max Input Capacitance: 430pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 150 mOhm @ 1.2A, 10V
Alternative Parts (Cross-Reference): AO7401; RRF015P03TL;
Introduction Date: July 28, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
P-Channel 30V 1.2A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323)
P-Channel 30V 1.2A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323)
P-Channel 30V 1.2A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323)
P CHANNEL MOSFET, -30V, 1.3A, SC-70; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.15V RoHS Compliant: Yes
MOSFET, P-CH, -30V, -1.2A, SOT-323; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.2A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.15V; Power RoHS Compliant: Yes
P CHANNEL MOSFET, -30V, 1.3A, SC-70, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:290mW RoHS Compliant: Yes
MOSFET P-CH 30V 1.2A SC70-3
MOSFET P-CH 30V 1.2A SC70-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-NTS4173PT1G | 025832-NTS4173PT1G | NTS4173PT1GOSTR-ND | 7804761 | 7804761P | 08R4029 | 81Y7057 | 05R9182 | NTS4173PT1G | NTS4173PT1G | NTS4173PT1G |
| Product Name | P-Channel -30V -1.2A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTS4173PT1G | Single FETs, MOSFETs | MOSFETs | MOSFETs | P Channel Mosfet, -30V, 1.3A, Sc-70; Channel Type Onsemi | Mosfet, P-Ch, -30V, -1.2A, Sot-323; Transistor Polarity Onsemi | P Channel Mosfet, -30V, 1.3A, Sc-70, Full Reel; Channel Type Onsemi | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| PD | 290 milliwatts | 290 milliwatts | 290 milliwatts | 290 milliwatts | |||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||||
| V(BR)DSS | 30 volts | 30 volts | |||||||||
| Package Type | SOT3; SOT323; SC-70-3 (SOT323) | SOT323; SC-70, SOT-323 | SOT323; Sot-323 (sc-70) | SC-70 | TO-3 | TO-3; SOT3; SOT323 | TO-3 | SOT323; SC-70, SOT-323 | SOT323; SC-70, SOT-323 |
