Power Field-Effect Transistor, 76A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-CH Power MOSFET 100V 76A TO-220AB Product overview: NTP6410ANG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 76A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 76A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTP6410ANG can be used for catalog matching and distributor lookup.
N-Channel 100V 76A (Tc) 188W (Tc) Through Hole TO-220
Manufacturer: ON Semiconductor
Win Source Part Number: 1083986-NTP6410ANG
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 188W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 76A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 120nC @ 10V
Max Input Capacitance: 4500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13 mOhm @ 76A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient
MOSFET Transistor; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:76A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:188W RoHS Compliant: Yes
MOSFET N-CH 100V 76A TO220AB
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| Rochester Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTP6410ANG | 278-NTP6410ANG | NTP6410ANG-ND | 1083986-NTP6410ANG | 71R6722 | NTP6410ANG | NTP6410ANG |
| Product Name | 100V 76A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP6410ANG | Mosfet Transistor; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| rDS(on) | 0.0130 ohms | ||||||
| Package Type | TO-220; TO-220-TMOS-IGBINT | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-3 | TO-220; TO-220-3 | ||
| Packing Method | Tube; Tube | Rail; Tube; Tube/Rail | Tube; Tube | ||||
| MOSFET Operating Mode | Enhancement |
